| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching method that can improve a selection ratio of a gallium nitride layer to a photoresist mask. <P>SOLUTION: A dry etching method for a gallium nitride layer having a photoresist mask laminated thereon includes: generating plasma of etching gas containing hydrogen iodide gas and BCl<SB POS="POST">3</SB>gas; and etching the gallium nitride layer by the plasma. A volume ratio of the hydrogen iodide gas in the etching gas is not less than 60% nor more than 80%. <P>COPYRIGHT: (C)2013,JPO&INPIT |
