| 摘要 |
<p>In a semiconductor device having a built-in Schottky barrier diode as a reflux diode, a maximum unipolar current is increased in a reflux state and a leakage current is reduced in an OFF state. A Schottky electrode is provided in at least a part of a surface between adjacent well regions of a second conductivity type disposed on a surface layer side of a drift layer of a first conductivity type, and an impurity concentration of a first conductivity type in a first region provided in a lower part of the Schottky electrode and provided between the adjacent well regions is set to be higher than a first impurity concentration of a first conductivity type in the drift layer and to be lower than a second impurity concentration of a second conductivity type in the well region.</p> |
