发明名称 | Variable resistance memory device including phase change area defined by spacers | ||
摘要 | A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate, a lower electrode formed in a bottom of each of the holes, a first spacer formed on the lower electrode and a sidewall of each of the holes, a second spacer formed on an upper sidewall of the first spacer, a third spacer formed on a lower sidewall of the first spacer below the second spacer, a variable resistance part that is formed on the lower electrode has a height lower than a height of a top of each hole, and an upper electrode formed on the variable resistance part to be buried in each hole. | ||
申请公布号 | US9190613(B2) | 申请公布日期 | 2015.11.17 |
申请号 | US201414555202 | 申请日期 | 2014.11.26 |
申请人 | SK Hynix Inc. | 发明人 | Jung Ha Chang;Lee Gi A |
分类号 | H01L47/00;H01L45/00 | 主分类号 | H01L47/00 |
代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
主权项 | 1. A variable resistance memory device, comprising: a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate; a lower electrode formed in a bottom of each of the holes; a first spacer formed on the lower electrode and a sidewall of each of the holes; a second spacer formed on an upper sidewall of the first spacer to a predetermined height; a third spacer formed on a lower sidewall of the first spacer below the second spacer; a variable resistance part formed on the lower electrode and having a height lower than a height of a top of each hole; and an upper electrode formed on the variable resistance part to be buried in each hole, wherein a resistivity of the variable resistance part is changed according to a phase-change of the variable resistance part. | ||
地址 | Gyeonggi-do KR |