Semiconductor light emitting element

摘要

A semiconductor light emitting element that outputs emitted light having a predetermined emitted light peak wavelength λ includes: at least a substrate; a lower distributed Bragg reflector layer provided on the substrate; and a light emitting layer provided on the lower distributed Bragg reflector layer. At least one phase changing layer having a thickness of mλ/2n (wherein n is the refractive index of the phase changing layer, and m is an integer 1 or greater) is provided within the lower distributed Bragg reflector layer.

主权项

1. A semiconductor light emitting element that outputs emitted light having a predetermined emitted light peak wavelength A, comprising at least:
a substrate; a lower distributed Bragg reflector layer provided on the substrate; and a light emitting layer provided on the lower distributed Bragg reflector layer; at least one phase changing layer having a thickness of mλ/2n (wherein n is the refractive index of the phase changing layer, and m is an integer 1 or greater) being provided within the lower distributed Bragg reflector layer; a distributed Bragg reflector layer is not provided as a layer above the light emitting layer; and an antireflection layer is provided as a layer above the light emitting layer; the lower distributed Bragg reflector layer being equipped with a first distributed Bragg reflector layer and a second distributed Bragg reflector layer; the at least one phase changing layer is provided between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer; and the antireflection layer being formed by a material having a refractive index lower than the refractive index of the light emitting layer.