Photodiode

摘要

According to one embodiment, a photodiode includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a film. The second semiconductor layer is provided in the first semiconductor layer. The third semiconductor layer is provided in the first semiconductor layer so as to surround the second semiconductor layer. Each of one ends of the second and third semiconductor layers is located at an upper surface of the first semiconductor layer. The first to third semiconductor layers include first to third impurity concentrations respectively. The second and third impurity concentrations are higher than the first impurity concentration. The film is provided above the third semiconductor layer, and blocks light to enter into a neighborhood of the third semiconductor layer.

主权项

1. A photodiode, comprising:
a first semiconductor layer of a first conductivity type having a first impurity concentration; a second semiconductor layer of a second conductivity type provided in the first semiconductor layer, one end of the second semiconductor layer being located at an upper surface of the first semiconductor layer, and having a second impurity concentration higher than the first impurity concentration; a third semiconductor layer of the first conductivity type provided in the first semiconductor layer so as to surround the second semiconductor layer, one end of the third semiconductor layer being located at the upper surface of the first semiconductor layer, and having a third impurity concentration higher than the first impurity concentration; and a film provided above the third semiconductor layer, and blocking light to enter into a neighborhood of the third semiconductor layer.