摘要 |
<p>The getter (8) has a getter layer whose pumping surface comprises two getter zones (9a1, 9a2) with different crystalline structures, where the getter zones have different activation temperatures. One of the getter zones is arranged on an adjustment sub-layer (10) adjusting activation temperature of a getter material. The getter zones are formed in a parallel plane. The getter zones and the adjustment sub-layer are formed on a substrate (3) e.g. silicon.</p> |