发明名称 Semiconductor device and ultrasonic diagnostic apparatus using the same
摘要 The present invention provides a semiconductor device of a bi-directional analog switch having a high linearity and a low electric power loss. An ultrasonic diagnostic apparatus having a high degree of detection accuracy, comprising the semiconductor device, is also provided. A semiconductor device of a bi-directional analog switch, comprising a switch circuit capable of switching ON or OFF bi-directionally, and built-in driving circuits for the switch circuit, wherein the driving circuit is connected to first and second power supplies, and a first power supply voltage is higher than a maximum voltage of a signal applied to an input/output terminal of the switch circuit, a second power supply voltage is lower than a minimum voltage of a signal applied to an input/output terminal of the switch circuit, and the driving circuit comprises a Zener diode and a p-type MOSFET connected in series between the first power supply and the switch circuit.
申请公布号 US9190992(B2) 申请公布日期 2015.11.17
申请号 US201113282882 申请日期 2011.10.27
申请人 Hitachi Power Semiconductor Device, Ltd. 发明人 Hara Kenji;Sakano Junichi
分类号 H03K17/687;H03K17/06;H03K17/081;H03K17/10 主分类号 H03K17/687
代理机构 Crowell & Moring LLP 代理人 Crowell & Moring LLP
主权项 1. A semiconductor device comprising: a switch circuit capable of switching ON or switching OFF, bi-directionally; and a driving circuit for driving the switch circuit, wherein, the driving circuit is connected to a first power supply comprising a first power supply voltage which is equal to or higher than a maximum voltage of a signal applied to a first terminal comprising an input or output terminal of the switch circuit, and the driving circuit is connected to a second power supply comprising a second power supply voltage which is equal to or lower than a minimum voltage of a signal applied to a second terminal comprising an input or output terminal of the switch circuit; andthe driving circuit comprises a Zener diode and a p-type MOSFET connected in series between the first power supply and the switch circuit.
地址 Hitachi-shi JP