发明名称 |
Semiconductor device and ultrasonic diagnostic apparatus using the same |
摘要 |
The present invention provides a semiconductor device of a bi-directional analog switch having a high linearity and a low electric power loss. An ultrasonic diagnostic apparatus having a high degree of detection accuracy, comprising the semiconductor device, is also provided. A semiconductor device of a bi-directional analog switch, comprising a switch circuit capable of switching ON or OFF bi-directionally, and built-in driving circuits for the switch circuit, wherein the driving circuit is connected to first and second power supplies, and a first power supply voltage is higher than a maximum voltage of a signal applied to an input/output terminal of the switch circuit, a second power supply voltage is lower than a minimum voltage of a signal applied to an input/output terminal of the switch circuit, and the driving circuit comprises a Zener diode and a p-type MOSFET connected in series between the first power supply and the switch circuit. |
申请公布号 |
US9190992(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201113282882 |
申请日期 |
2011.10.27 |
申请人 |
Hitachi Power Semiconductor Device, Ltd. |
发明人 |
Hara Kenji;Sakano Junichi |
分类号 |
H03K17/687;H03K17/06;H03K17/081;H03K17/10 |
主分类号 |
H03K17/687 |
代理机构 |
Crowell & Moring LLP |
代理人 |
Crowell & Moring LLP |
主权项 |
1. A semiconductor device comprising:
a switch circuit capable of switching ON or switching OFF, bi-directionally; and a driving circuit for driving the switch circuit, wherein,
the driving circuit is connected to a first power supply comprising a first power supply voltage which is equal to or higher than a maximum voltage of a signal applied to a first terminal comprising an input or output terminal of the switch circuit, and the driving circuit is connected to a second power supply comprising a second power supply voltage which is equal to or lower than a minimum voltage of a signal applied to a second terminal comprising an input or output terminal of the switch circuit; andthe driving circuit comprises a Zener diode and a p-type MOSFET connected in series between the first power supply and the switch circuit. |
地址 |
Hitachi-shi JP |