TSV formation

摘要

A device includes a substrate having a front side and a backside, the backside being opposite the front side. An isolation layer is disposed on the front side of the substrate, wherein first portions of isolation layer and the substrate are in physical contact. A through substrate via (TSV) extends from the front side to the backside of the substrate. An oxide liner is on a sidewall of the TSV. The oxide liner extends between second portions of the substrate and the isolation layer. A dielectric layer having a metal pad is disposed over the isolation layer on the front side of the substrate. The metal pad and the TSV are formed of a same material.

主权项

1. A method comprising:
forming a dielectric layer over a substrate; forming a first opening in the dielectric layer; prior to forming the first opening, forming a second opening in the substrate, wherein the first and the second openings are aligned and have different horizontal dimensions; also prior to forming the first opening, forming a first isolation layer on sidewalls of the second opening using a thermal oxidation process; filling a metallic material into the first and the second openings; and performing a planarization on the metallic material to remove excess portions of the metallic material above a top surface of the dielectric layer, wherein remaining portions of the metallic material form a metal pad in the first opening and a through-substrate via (TSV) in the second opening.