| 主权项 |
1. A thin film formation method to form an amorphous silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust, the method comprising:
adsorbing a silane-based gas composed of silicon and hydrogen on the surface of the object by supplying the silane-based gas onto the surface of the object, while not supplying a gas containing the impurity into the process chamber, wherein the adsorbing of the silane-based gas and the supplying of the silane-based gas are performed under a first predetermined temperature and a first predetermined pressure where the silane-based gas is able to be adsorbed on the surface and not to be thermally decomposed; stopping supplying the silane-based gas; and reacting the adsorbed silane-based gas with the gas containing the impurity by catalysis of an atom of the gas containing the impurity to form the amorphous silicon film containing the impurity on the surface of the object by supplying the gas containing the impurity onto the surface adsorbed with the silane-based gas, under a second predetermined temperature and a second predetermined pressure where an amorphous silicon film is able to be formed, wherein the adsorbing, the stopping and the reacting are performed and repeated in the described order, and the gas containing the impurity comprises one or more gases selected from the group consisting of BC13, PH3, PF3, AsH3, PC13, and B2H6. |
