| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a noncontact method of evaluating and measuring a electrical characteristic of an oxide semiconductor thin film without attaching an electrode. <P>SOLUTION: A sample on which an oxide semiconductor thin film is formed is irradiated with exciting light and microwave. After the maximum value of a reflection wave of microwave from the oxide semiconductor thin film which changes by the irradiation of the exciting light is measured, the irradiation of the exciting light is stopped. The change in reflectivity of the reflection wave of microwave from the oxide semiconductor thin film after the stop of the irradiation of the exciting light is measured. A lifetime value is calculated from the measured value, and mobility of the oxide semiconductor thin film is then determined. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
