Cascoded semiconductor devices

摘要

The invention provides a cascode transistor circuit with a main power transistor and a cascode MOSFET formed as an integrated circuit, packaged to form the cascode transistor circuit. A control and protection circuit is integrated into the integrated circuit together and a storage capacitor provides an energy source to drive the control and protection circuit. A charging circuit is also integrated into the integrated circuit for charging the storage capacitor.

主权项

1. A cascode transistor circuit comprising:
a gallium nitride or silicon carbide field effect transistor having its drain connected to a high power line a silicon MOSFET with its drain connected to the source of the gallium nitride or silicon carbide FET and its source connected to a low power line and formed as a part of an integrated circuit, wherein the gallium nitride or silicon carbide field effect transistor and the integrated circuit are packaged to form the cascode transistor circuit; a control and protection circuit integrated into the integrated circuit comprising at least one active component;
wherein the at east one active component comprises a comparator for comparing the MOSFET source voltage with the MOSFET drain voltage and a control switch to turn on the MOSFET when the source voltage exceeds the drain voltage; a storage capacitor for providing an energy source to drive the active components; and a charging circuit integrated into the integrated circuit for charging the storage capacitor.