Light emitting diode structure

摘要

A light emitting diode structure comprising a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a current resisting layer, a current spreading layer, a first electrode and a second electrode is provided. The first semiconductor layer is formed on the substrate. The active layer covers a portion of the first semiconductor layer, and exposes another portion of the first semiconductor layer. The second semiconductor layer is formed on the active layer. The current resisting layer covers a portion of the second semiconductor layer, and exposes another portion of the second semiconductor layer. The current spreading layer covers the second semiconductor layer and the current resisting layer. The current spreading layer is formed with a reverse trapezoidal concave over the current resisting layer. The first electrode is disposed on the first semiconductor layer. The second electrode is disposed within the reverse trapezoidal concave.

主权项

1. A light emitting diode structure, comprising:
a substrate; a first semiconductor layer formed on the substrate; an active layer covering a portion of the first semiconductor layer and exposing another portion of the first semiconductor layer; a second semiconductor layer formed on the active layer; a current resisting layer covering a portion of the second semiconductor layer and exposing another portion of the second semiconductor layer; a current spreading layer covering the second semiconductor layer and the current resisting layer, wherein the current spreading layer is formed with a reverse trapezoidal concave over a top of the current resisting layer; a first electrode disposed on the first semiconductor layer; and a second electrode disposed within the reverse trapezoidal concave.