| 发明名称 | Spin polarization transistor element | ||
| 摘要 | There are provided with a source part made of a ferromagnetic material magnetized in a first direction, a drain part made of a ferromagnetic material magnetized in the first direction, and separated from and arranged in parallel to the source part, a channel part arranged between the source part and the drain part, and bonded with the source part and the drain part directly or through a tunnel layer, and a circularly polarized light irradiation part that irradiates the channel part with circularly polarized light for controlling a direction of spin of the channel part. | ||
| 申请公布号 | US9190500(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201314421227 | 申请日期 | 2013.07.25 |
| 申请人 | Japan Science and Technology Agency;The University of York | 发明人 | Hirohata Atsufumi |
| 分类号 | H01L29/00;H01L29/66;H01L29/778;H01L29/20;H01L29/82;H01L27/22 | 主分类号 | H01L29/00 |
| 代理机构 | Amster, Rothstein & Ebenstein, LLP | 代理人 | Amster, Rothstein & Ebenstein, LLP |
| 主权项 | 1. A spin polarization transistor element comprising: a source part made of a ferromagnetic material magnetized in a first direction; a drain part made of a ferromagnetic material magnetized in the first direction, and separated from and arranged in parallel to the source part; a channel part arranged between the source part and the drain part, and bonded with the source part and the drain part directly or through a tunnel layer; and a circularly polarized light irradiation part configured to irradiate the channel part with circularly polarized light for controlling a direction of spin of the channel part. | ||
| 地址 | Kawaguchi-shi, Saitama JP | ||