Systems and devices including fin field-effect transistors each having U-shaped semiconductor fin

摘要

Disclosed are methods, systems and devices, including a system, having a memory device. In some embodiments, the memory device includes a plurality of fin field-effect transistors disposed in rows, a plurality of insulating fins each disposed between the rows, and a plurality of memory elements each coupled to a terminal of a fin field-effect transistor among the plurality of fin field-effect transistors.

主权项

1. A device, comprising:
fin field-effect transistors disposed in rows, wherein each of the fin field-effect transistors comprises a semiconductor fin comprising a generally U-shaped distal portion with two legs comprising a source and a drain of each of the fin field-effect transistors, wherein the two legs define a gap therebetween, wherein the two legs and the gap are aligned such that a drive current generated between the source and the drain flows in a direction parallel to alignment of the rows; an insulator disposed solely in the gap of the semiconductor fin of each of the fin field-effect transistors; and insulating fins each disposed in a second gap defined between the fin field-effect transistors disposed in the rows.