发明名称 |
AlN single crystal Schottky barrier diode and method of producing the same |
摘要 |
An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm−2 or less and a thickness of 300 μm or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and −40 V is at least 103 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of −40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V. |
申请公布号 |
US9190483(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201314374331 |
申请日期 |
2013.01.30 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
Irokawa Yoshihiro;Shimamura Kiyoshi;Garcia Villora Encarnacion Antonia |
分类号 |
H01L29/20;H01L29/872;H01L29/66;H01L29/45;H01L29/47 |
主分类号 |
H01L29/20 |
代理机构 |
Drinker Biddle & Reath LLP |
代理人 |
Drinker Biddle & Reath LLP |
主权项 |
1. An AlN single crystal Schottky barrier diode comprising:
an AlN single crystal substrate having a defect density of 106 cm−2 or less and a thickness of 300 μm or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode. |
地址 |
Tsukuba-shi, Ibaraki JP |