Light emitting diode array and method for manufacturing the same

摘要

An LED array includes a substrate, protrusions formed on a top surface of the substrate, and LEDs formed on the top surface of the substrate and located at a top of the protrusions. The LEDs are electrically connected with each other. Each LED includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence. A bottom surface of the n-type GaN layer connecting the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity.

主权项

1. An LED array comprising:
a substrate; a plurality of protrusions formed on a top surface of the substrate; and a plurality of LEDs formed on the top surface of the substrate and located on top of the protrusions, the plurality of LEDs being electrically connected with each other, each LED comprising a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence, a bottom surface of the n-type GaN layer connecting upper surface of the connecting layer, wherein the n-type GaN layer is wider than the upper surface of the connecting layer, wherein the n-type GaN layer having a reentrant shape opening, and the reentrant shape opening is roughened to obtain a roughened exposed portion, the bottom surface of the n-type GaN layer having an N-face polarity, wherein the protrusions are spaced from each other and reflect light emitted from the active layer toward a light emitting face of the LED.