Method and apparatus for producing semiconductor crystal, and semiconductor crystal

摘要

A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal (8) while dropping a produced melt into the impurity-containing melt, thereby producing a semiconductor crystal.

主权项

1. A method of producing a semiconductor crystal by placing a seed crystal and a melt containing an impurity in a longitudinal container and solidifying said impurity-containing melt from a lower side that is in contact with said seed crystal to an upper side, wherein
said semiconductor crystal is produced by solidifying said impurity-containing melt from the lower side that is in contact with said seed crystal to the upper side while dropping, into said seed crystal and said impurity-containing melt placed in a bottom section of said longitudinal container, a melt of a dropping raw material block suspended above said bottom section and made of a semiconductor material having an impurity concentration lower than an impurity concentration of said impurity-containing melt, and ((1−k)−0.25)≦S1/S2≦((1−k)+0.25) is satisfied where S1 represents a horizontal cross sectional area of said dropping raw material block, S2 represents a horizontal cross sectional area of said semiconductor crystal, and k represents a segregation coefficient of the impurity contained in said impurity-containing melt.