Rapid synthesis of graphene and formation of graphene structures

摘要

A process for rapid synthesis of few-layer graphene films on Cu foil by microwave plasma chemical vapor deposition (MPCVD). The plasma/metal interaction can be useful for a rapid synthesis of such thin films. The process can produce films of controllable quality from amorphous to highly crystalline by adjusting plasma conditions during growth processes of ˜100 sec duration and with little or no supplemental substrate heating. Films have been characterized using Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results help to identify the stages involved in the MPCVD deposition of thin carbon films on Cu foil. In yet other embodiments, the films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to approximately 2 atomic % are observed. The growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films.

主权项

1. A method of graphene film synthesis, the method comprising:
a. providing a copper foil, b. placing the foil in a microwave plasma chemical vapor deposition chamber, c. evacuating the chamber to approximately 2 Torr, d. providing hydrogen gas to the chamber, e. exposing the foil to plasma, f. providing methane gas maintaining approximately 10 Torr in the chamber, wherein the foil is supported by a ceramic stud elevating the foil above a molybdenum puck.