| 发明名称 | Composite charged particle beam apparatus and thin sample processing method | ||
| 摘要 | A composite charged particle beam apparatus includes a FIB column for irradiating a thin sample with a FIB and a GIB column for irradiating the thin sample with a GIB. The thin sample is placed on a sample stage, and a tilt unit tilts the thin sample about a tilt axis of the sample stage, the tilt axis being orthogonal to the FIB irradiation axis and being located inside a plane formed by the FIB irradiation axis and the GIB irradiation axis. A tilt sample holder is mounted on the sample stage and fixes the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to the GIB irradiation axis and the azimuth angle of the GIB column can be changed by rotation of the sample stage. | ||
| 申请公布号 | US9190243(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201314012019 | 申请日期 | 2013.08.28 |
| 申请人 | HITACHI HIGH-TECH SCIENCE CORPORATION | 发明人 | Asahata Tatsuya;Suzuki Hidekazu;Torikawa Shota |
| 分类号 | H01J37/30;H01J37/02;H01J37/20;H01J37/28 | 主分类号 | H01J37/30 |
| 代理机构 | Adams & Wilks | 代理人 | Adams & Wilks |
| 主权项 | 1. A composite charged particle beam apparatus, comprising: a first charged particle beam column configured to irradiate a thin sample with a first charged particle beam; a second charged particle beam column configured to irradiate an irradiation position of the first charged particle beam of the thin sample with a second charged particle beam; a sample stage on which the thin sample is placed, the sample stage being rotatable about the irradiation axis of the first charged particle beam column; a tilt unit configured to tilt the thin sample about a tilt axis of the sample stage, the tilt axis being orthogonal to the irradiation axis of the first charged particle beam column and being located inside a plane formed by the irradiation axis of the first charged particle beam column and the irradiation axis of the second charged particle beam column; and a tilt sample holder placed on the sample stage and configured to fix the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to the irradiation axis of the second charged particle beam column and the azimuth angle of the second charged particle beam column can be changed by rotation of the sample stage. | ||
| 地址 | JP | ||