| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a normally-off type nitride semiconductor device, along with its manufacturing method, capable of suppressing increase in on-resistance and reducing a gate leak current and a drain leak current during off period. <P>SOLUTION: A nitride semiconductor layer 15 in an upper layer is such material as has a larger lattice constant than that of a nitride semiconductor layer 14 in a lower layer. A surface of the nitride semiconductor layer 15 in the upper layer among a gate electrode, a source electrode, and a drain electrode is applied with a plasma treatment with nitrogen gas. By performing the plasma treatment, a two-dimensional electronic gas layer 16 is formed which has a carrier concentration higher than that of a two-dimensional electronic gas layer formed with a lamination structure of the nitride semiconductor layer with no plasma treatment, which makes a normally-off type nitride semiconductor device having an excellent characteristic. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
