| 发明名称 | Nanopiezoelectric generator and method of manufacturing the same | ||
| 摘要 | A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure. | ||
| 申请公布号 | US9190605(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201213561509 | 申请日期 | 2012.07.30 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Cha Seung-nam;Kim Sung-min;Sohn Jung-inn |
| 分类号 | H01L41/113;H01L41/29;H01L41/18;H01L41/253 | 主分类号 | H01L41/113 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A nanopiezoelectric generator comprising: a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, the at least one nanostructure comprising a piezoelectric material and first carriers; and a concentration adjusting unit, comprising a ferroelectric material disposed on a surface of the at least one nanostructure, wherein the ferroelectric material adjusts a concentration of the first carriers in the at least one nanostructure. | ||
| 地址 | Suwon-si KR | ||