发明名称 |
Array substrate and method for fabricating the same |
摘要 |
An array substrate and a method for fabricating the same are disclosed. The method for fabricating the array substrate comprises: forming a pattern of a gate electrode (2) and a common electrode (3) on a substrate (1); forming a pattern of a gate insulating layer (4), an active layer (5), a source/drain electrode layer (6) and a first passivation layer (7), wherein the first passivation layer (7) has a via hole and a thin film transistor (TFT) channel window, and the TFT channel window is located above the gate electrode (2); forming a TFT channel and a pixel electrode (9) with slits, wherein the pixel electrode (9) is connected to one of the source/drain electrode (6) through the via hole. The method is not only simple and stable but also improves the TFT quality. |
申请公布号 |
US9190564(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201213995122 |
申请日期 |
2012.11.07 |
申请人 |
BOE Technology Group Co., Ltd. |
发明人 |
Yang Jing;Xue Jianshe;Liu Xiang |
分类号 |
H01L21/00;H01L33/08;G02F1/1362;H01L27/12 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating an array substrate, comprising:
forming a pattern of a gate electrode and a common electrode on a substrate; forming a pattern of a gate insulating layer, an active layer, a source/drain electrode layer and a first passivation layer, wherein the first passivation layer has a via hole and a TFT channel window, and the TFT channel window is located above the gate electrode; forming a TFT channel and a pixel electrode with slits, wherein the pixel electrode is connected to one of the source/drain electrode through the via hole; wherein a material of the gate electrode and the common electrode is single-walled carbon nanotube. |
地址 |
Beijing CN |