发明名称 Array substrate and method for fabricating the same
摘要 An array substrate and a method for fabricating the same are disclosed. The method for fabricating the array substrate comprises: forming a pattern of a gate electrode (2) and a common electrode (3) on a substrate (1); forming a pattern of a gate insulating layer (4), an active layer (5), a source/drain electrode layer (6) and a first passivation layer (7), wherein the first passivation layer (7) has a via hole and a thin film transistor (TFT) channel window, and the TFT channel window is located above the gate electrode (2); forming a TFT channel and a pixel electrode (9) with slits, wherein the pixel electrode (9) is connected to one of the source/drain electrode (6) through the via hole. The method is not only simple and stable but also improves the TFT quality.
申请公布号 US9190564(B2) 申请公布日期 2015.11.17
申请号 US201213995122 申请日期 2012.11.07
申请人 BOE Technology Group Co., Ltd. 发明人 Yang Jing;Xue Jianshe;Liu Xiang
分类号 H01L21/00;H01L33/08;G02F1/1362;H01L27/12 主分类号 H01L21/00
代理机构 代理人
主权项 1. A method for fabricating an array substrate, comprising: forming a pattern of a gate electrode and a common electrode on a substrate; forming a pattern of a gate insulating layer, an active layer, a source/drain electrode layer and a first passivation layer, wherein the first passivation layer has a via hole and a TFT channel window, and the TFT channel window is located above the gate electrode; forming a TFT channel and a pixel electrode with slits, wherein the pixel electrode is connected to one of the source/drain electrode through the via hole; wherein a material of the gate electrode and the common electrode is single-walled carbon nanotube.
地址 Beijing CN