Structure comprises an As-deposited doped single crystalline Si-containing film

摘要

Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

主权项

1. An structure comprising:
a substrate; and an as-deposited doped single crystalline Si-containing film directly on the substrate comprising at least about 3×1020 atoms cm−3 of substitutional n-dopant, containing less than about 3×1019 atoms cm−3 of an electrically inactive dopant and having a resistivity of 0.7 mΩ·cm or less, wherein the as-deposited doped single crystalline Si-containing film and substrate have a dopant profile consistent with a layer deposited by chemical vapor deposition (CVD) without post-deposition annealing.