METHOD FOR MANUFACTURING OF A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device performs plasma heat treatment while providing gas for adjusting a threshold voltage to at least a part of a substrate to form a fixed charge area having fixed charges on a surface of the substrate. In addition, at least one MOS transistor is formed on the substrate having the fixed charge area. A threshold voltage of the MOS transistor is easily adjusted by the method for manufacturing a semiconductor device.