Method and apparatus for slice and view sample imaging

摘要

Methods, apparatuses, and systems for slice and view processing of samples with dual beam systems. The slice and view processing includes exposing a vertical wall of a trench formed in a sample surface; capturing a first image of the wall by interrogating the wall with an interrogating beam while the wall is at a first orientation relative to the beam; capturing a second image of the wall by interrogating the wall with the beam while the wall is at a second orientation relative to the beam, wherein first distances in the first image between a reference point and surface points on the wall are different than second distances in the second image between the reference point and the surface points; determining elevations of the surface points using the first distances and the second distances; and fitting a curve to topography of the wall using the elevations.

主权项

1. An apparatus for observing a feature using dual charged particle beams, comprising: a focused ion beam column configured to generate, focus, and direct a focused ion beam;
an electron beam column configured to generate, focus, and direct an electron beam; one or more processors; and a computer-readable storage medium coupled to at least one of the one or more processors, the computer-readable storage medium comprising first executable instructions and second executable instructions, wherein the first executable instructions, when executed, cause the one or more processors to direct the focused ion beam to mill a trench in a surface of a substrate, the trench exposing a vertical wall having an area around a feature to be observed, and wherein the second executable instructions, when executed, cause the one or more processors to:
direct the electron beam to capture a first electron beam image of the vertical wall while the electron beam column is maintained at a first angle of incidence relative to a longitudinal axis of the electron beam column;change the angle of incidence between the longitudinal axis and the vertical wall from the first angle of incidence to a second angle of incidence;direct the electron beam to capture a second electron beam image of the wall while the electron beam column is maintained at the second angle of incidence; andapproximate a topography of the vertical wall based on differences between the first electron beam image and the second electron beam image.