Magnetoresistive element and method of manufacturing the same

摘要

According to one embodiment, a magnetoresistive element manufacturing method is provided. In this magnetoresistive element manufacturing method, a first ferromagnetic layer, tunnel barrier layer, and second ferromagnetic layer are sequentially formed on a substrate. A conductive hard mask is formed on the second ferromagnetic layer. The hard mask is patterned. A hard layer is formed on the side surface of the hard mask. The second ferromagnetic layer, tunnel barrier layer, and first ferromagnetic layer are processed by IBE in an oblique direction by using the hard mask and hard layer as masks. The IBE etching rate of the hard layer is lower than that of the hard mask.

主权项

1. A magnetoresistive element manufacturing method comprising:
sequentially forming a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer on a substrate; forming a conductive hard mask on the second ferromagnetic layer; patterning the hard mask; forming a hard layer on a side surface of the hard mask; and processing the second ferromagnetic layer, the tunnel barrier layer, and the first ferromagnetic layer by IBE in an oblique direction by using the hard mask and the hard layer as masks, wherein the hard layer has an IBE etching rate lower than that of the hard mask.