Method for a uniform compressive strain layer and device thereof

摘要

A methodology for forming a compressive strain layer with increased thickness that exhibits improved device performance and the resulting device are disclosed. Embodiments may include forming a recess in a source or drain region of a substrate, implanting a high-dose impurity in a surface of the recess, and depositing a silicon-germanium (SiGe) layer in the recess.

主权项

1. A method comprising:
forming a recess in a source or drain region of a substrate; implanting a high-dose impurity along an axis perpendicular to a bottom surface of the recess; or implanting a high-dose impurity at an angle between 0 and 90 degrees to a side surface of the recess; depositing a silicon-germanium (SiGe) layer in the recess; and adjusting a thickness of the SiGe layer based on a concentration of the high-dose impurity, the high-dose impurity implanted at a concentration of 1e14 atoms/cm2 to 1e15 atoms/cm2.