发明名称 |
Epitaxial silicon wafer and production method thereof |
摘要 |
Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression. |
申请公布号 |
US9190267(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201113293843 |
申请日期 |
2011.11.10 |
申请人 |
SUMCO Corporation |
发明人 |
Kihara Takayuki;Takaishi Kazushige;Hashimoto Yasuyuki |
分类号 |
C30B29/06;H01L21/02;B24B7/22 |
主分类号 |
C30B29/06 |
代理机构 |
Christensen O'Connor Johnson Kindness PLLC |
代理人 |
Christensen O'Connor Johnson Kindness PLLC |
主权项 |
1. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer, wherein the epitaxial layer is formed on the silicon wafer for epitaxial growth with a cross-sectional form satisfying the following expression (1):
ΔBowmv=ΔBowcv*k (1) wherein ΔBowmv is a difference between a measured value ΔBowep of the warping of the epitaxial silicon wafer after the epitaxial layer growth and a measured value ΔBowpw of the warping of the silicon wafer for epitaxial growth before the epitaxial layer growth when an epitaxial layer is formed on the silicon wafer for epitaxial growth in a flat state, and ΔBowcv is a calculated value of the warping of the epitaxial silicon wafer based on a given computation expression, and k=0.5±0.05. |
地址 |
Minato-ku JP |