发明名称 Transistor voltage threshold mismatch compensated sense amplifiers and methods for precharging sense amplifiers
摘要 Sense amplifiers and methods for precharging are disclosed, including a sense amplifier having a pair of cross-coupled complementary transistor inverters, and a pair of transistors, each one of the pair of transistors coupled to a respective one of the complementary transistor inverters and a voltage. The sense amplifier further includes a capacitance coupled between the pair of transistors. One method for precharging includes coupling input nodes of the sense amplifier to a precharge voltage, coupling the input nodes of the sense amplifier together, and coupling a resistance to each transistor of a cross-coupled pair to set a voltage threshold (VT) mismatch compensation voltage for each transistor. The voltage difference between the VT mismatch compensation voltage of each transistor is stored.
申请公布号 US9190126(B2) 申请公布日期 2015.11.17
申请号 US201314094466 申请日期 2013.12.02
申请人 Micron Technology, Inc. 发明人 Thompson J. Wayne;Kirsch Howard C.;Ingalls Charles L.
分类号 G01R19/00;G11C7/12;G11C7/06;G11C11/4091;G11C11/4094 主分类号 G01R19/00
代理机构 Dorsey & Whitney LLP 代理人 Dorsey & Whitney LLP
主权项 1. An apparatus, comprising: first and second field-effect transistors (FETs), the first and second FETs having a respective drain configured to receive a respective input signal; and a capacitance coupled between sources of the first and second FETs, the capacitance configured to store a voltage difference between the sources of the first and second FETs to compensate for threshold voltage differences between the first and second FETs; and third and fourth FETs, the third FET coupled to the drain of the first FET and the fourth FET coupled to the drain of the second FET, wherein an equilibration signal is applied to a gate of the third FET and a gate of the Fourth FET.
地址 Boise ID US