Method for fabricating semiconductor device having magnetic tunnel junction layer patterned using etching gas containing oxygen

摘要

In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer. The magnetic tunnel junction layer is patterned using an etching gas containing oxygen. An insulating layer is formed by oxidizing the conductive layer exposed outside the patterned magnetic tunnel junction layer using the etching gas.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming an insulating layer between the substrate and bottom layer; forming a hole penetrating the insulating layer; forming a contact plug inside the hole; forming a conducting pattern on the contact plug and inside the hole; forming a conductive layer on the substrate having the bottom layer; forming a magnetic tunnel junction layer on the conductive layer; patterning the magnetic tunnel junction layer using an etching gas containing oxygen; and forming an insulating layer by oxidizing the conductive layer, which is exposed outside the patterned magnetic tunnel junction layer, using the etching gas.