| 发明名称 | Thin film stack | ||
| 摘要 | The present disclosure is drawn to a thin film stack, which includes a substrate, a metal layer, and an adhesive layer comprising a blend of from 3 at % to 94 at % indium oxide, from 3 at % to 94 at % gallium oxide, and from 3 at % to 94 at % zinc oxide. The adhesive layer is adhered between the substrate and the metal layer. | ||
| 申请公布号 | US9190598(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201214417936 | 申请日期 | 2012.07.31 |
| 申请人 | Hewlett-Packard Development Company, L.P. | 发明人 | Abbott, Jr. James Elmer;Mardilovich Peter;Shelton Christopher |
| 分类号 | B41J2/45;H01L41/08;B41J2/14;H01L41/314 | 主分类号 | B41J2/45 |
| 代理机构 | Thorpe, North & Western L.L.P. | 代理人 | Thorpe, North & Western L.L.P. |
| 主权项 | 1. A thin film stack, comprising a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, and a piezoelectric layer, the adhesive layer comprising from 3 at % to 94 at % indium oxide, from 3 at % to 94 at % gallium oxide, and from 3 at % to 94 at % zinc oxide. | ||
| 地址 | Houston TX US | ||