Light emitting device

摘要

A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.

主权项

1. A light emitting device comprising:
a first semiconductor layer having an n-type dopant; an active layer on the first semiconductor layer; an electron blocking layer on the active layer; a carrier injection layer between the active layer and the electron blocking layer; and a second semiconductor layer having a p-type dopant and provided on the electron blocking layer, wherein the carrier injection layer includes the n-type dopant and the p-type dopant, a concentration of the n-type dopant of the carrier injection layer is less than a concentration of the p-type dopant of the carrier injection layer, and the carrier injection layer comprises a bonded compound including an atom of the p-type dopant and an atom of the n-type dopant.