Nanostructure semiconductor light emitting device

摘要

A nanostructure semiconductor light emitting device includes a plurality of light emitting nanostructures, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore, a contact electrode disposed on a surface of the second conductivity-type semiconductor layer and formed of a transparent conductive material, a first light transmissive portion filling space between the plurality of light emitting nanostructures and formed of a material having a first refractive index, and a second light transmissive portion disposed on an upper surface of the first light transmissive portion to cover the plurality of light emitting nanostructures and formed of a material having a second refractive index higher than the first refractive index.

主权项

1. A nanostructure semiconductor light emitting device, comprising:
a plurality of light emitting nanostructures, each of which including a nanocore having a first conductivity-type semiconductor material, and a shell including an active layer and a second conductivity-type semiconductor layer on a surface of the nanocore; a contact electrode on a surface of the second conductivity-type semiconductor layer and including a transparent conductive material; a first light transmissive portion between the plurality of light emitting nanostructures and including a material having a first refractive index; and a second light transmissive portion on an upper surface of the first light transmissive portion and covering the plurality of light emitting nanostructures and including a material having a second refractive index higher than the first refractive index.