发明名称 |
Solution-processed inorganic photo-voltaic devices and methods of production |
摘要 |
Methods of producing photo-voltaic devices include spray coating deposition of metal chalcogenides, contact lithographic methods and/or metal ion injection. Photo-voltaic devices include devices made by the methods, tandem photo-voltaic devices and bulk junction photovoltaic devices. |
申请公布号 |
US9190543(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201013376118 |
申请日期 |
2010.06.04 |
申请人 |
The Regents of the University of California |
发明人 |
Yang Yang;Hou Wei-Jen;Lei Bao;Li Shenghan |
分类号 |
H01L31/18;H01L31/032;C23C18/12;H01L31/0224;H01L31/0392;H01L31/0725;H01L31/0749;H01L31/0272;H01L31/036 |
主分类号 |
H01L31/18 |
代理机构 |
Venable LLP |
代理人 |
Venable LLP ;Daley Henry J.;Riggs F. Brock |
主权项 |
1. A method of producing a photo-voltaic device, comprising:
dissolving metal chalcogenides in a solvent to provide a precursor solution having a concentration of chalcogenides in solution of less than about 1 mmole/ml; heating a substrate to a temperature between 300° C. and 600° C.; spraying at least a portion of said precursor solution onto a structure comprising said substrate to be annealed to form at least part of an active layer of said photo-voltaic device; and varying a concentration of copper in said precursor solution to provide a concentration gradient of copper in a vertical direction as said spraying builds up said active layer in said vertical direction so as to provide an average grain size of at least 20 nm, wherein said concentration of copper in said precursor solution is varied by varying an amount of solvent in said precursor solution. |
地址 |
Oakland CA US |