Retrograde doped layer for device isolation

摘要

Embodiments herein provide device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage. A set of high mobility channel fins is formed over the retrograde doped layer, each of the set of high mobility channel fins comprising a high mobility channel material (e.g., silicon or silicon-germanium). The retrograde doped layer may be formed using an in situ doping process or a counter dopant retrograde implant. The device may further include a carbon liner positioned between the retrograde doped layer and the set of high mobility channel fins to prevent carrier spill-out to the high mobility channel fins.

主权项

1. A method for forming a device, the method comprising:
forming a retrograde doped layer over a substrate, the retrograde doped layer comprising one of: doped silicon (Si), and doped silicon-germanium (Si—Ge); forming a set of high mobility channel fins over the retrograde doped layer, each of the set of high mobility channel fins comprising at least one of: Si, and Si—Ge; and forming a set of silicon fins adjacent the set of high mobility channel fins, the silicon fins having no retrograde doped layer formed beneath.