Pattern inspection device and pattern inspection method

摘要

Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate.

主权项

1. A pattern inspection device comprising:
an imaging unit that images an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit that generates a simulated electron beam image using a parameter based on design data, the parameter representing a characteristic of the electron beam image; and an inspection unit that inspects the pattern on the substrate by comparing the electron beam image of the pattern and the simulated electron beam image, the electron beam image of the pattern being imaged by said imaging unit, the simulated electron beam image being generated by said simulated electron beam image generation unit.