发明名称 Method for producing piezoelectric actuator
摘要 A method for producing a piezoelectric actuator includes forming a diffusion preventing layer on one surface of a substrate formed of a metallic material for preventing a diffusion of a metal from the substrate, heating a diffusion preventing layer at a first temperature in order to relieve a residual stress in the diffusion preventing layer, forming an electrode on a surface of the diffusion preventing layer, the surface not facing the substrate, forming a piezoelectric layer of a piezoelectric material on a surface of the electrode, the surface not facing the diffusion preventing layer, and annealing the piezoelectric layer at a second temperature. Accordingly, it is possible to prevent the electrode from being exfoliated from the diffusion preventing layer. Moreover, it is possible to prevent a crack being developed in the piezoelectric layer.
申请公布号 US9186898(B2) 申请公布日期 2015.11.17
申请号 US200812057162 申请日期 2008.03.27
申请人 Brother Kogyo Kabushiki Kaisha 发明人 Tsuruko Masanori
分类号 B41J2/16;H01L41/314;H01L41/29;H01L41/316;H01L41/312;H01L41/37;H01L41/09;C01B33/113;C23C18/12;H03H3/00;H03H3/02;H01L41/319 主分类号 B41J2/16
代理机构 Baker Botts L.L.P. 代理人 Baker Botts L.L.P.
主权项 1. A method for producing a piezoelectric actuator, comprising: forming a diffusion preventing layer, on one surface of a substrate formed of a metallic material, for preventing a diffusion of a metal from the substrate by colliding particles of metallic oxide with the one surface of the substrate to deposit the particles on the one surface of the substrate; heating the diffusion preventing layer at a first temperature after forming the diffusion preventing layer by colliding the particles of metallic oxide with the one surface of the substrate; forming an electrode on a surface of the diffusion preventing layer, the surface of the diffusion preventing layer not facing the substrate; forming a piezoelectric layer of a piezoelectric material on a surface of the electrode, the surface of the electrode not facing the diffusion preventing layer; and annealing the piezoelectric layer at a second temperature, wherein the first temperature is lower than the second temperature, wherein heating the diffusion preventing layer at the first temperature is performed prior to forming the piezoelectric layer of the piezoelectric material, and wherein after the electrode has been formed and before the piezoelectric layer is formed, a residual stress in the diffusion preventing layer is relieved by the heating of the diffusion preventing layer at the first temperature.
地址 Nagoya-shi, Aichi-ken JP