| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce capacitance between control gate lines and achieve high integration.SOLUTION: A semiconductor device comprises: a columnar silicon layer 121 in which a first diffusion layer 156, a channel region 211 and a second diffusion layer 150 are formed from a silicon substrate 101 side in this order; floating gates 133, 134 arranged along two directions symmetric with each other across the columnar silicon layer 121; and a control gate line 147 arranged along two directions symmetric with each other, other than the two directions, across the columnar silicon layer 121; and a tunnel insulation film 127 formed between the columnar silicon layer 121 and the floating gates 133, 134, in which the control gate line 147 is arranged so as to surround the floating gates 133, 134 and the columnar silicon layer 121 with an interpoly dielectric 145 lying between the control gate line 147 and the floating gates 133, 134 and the columnar silicon layer 121.</p> |
