发明名称 ベース幅決定式ラッチおよび非ラッチ状態を伴うMCT素子
摘要 <p>Methods and systems for a gate-controlled thyristor which switches between narrow-base operation in the ON state and wide -base operation in the OFF state, and which can only sustain latch-up in the narrow-base ON state.</p>
申请公布号 JP5815881(B2) 申请公布日期 2015.11.17
申请号 JP20140533485 申请日期 2012.10.01
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分类号 H01L29/749;H01L29/06;H01L29/74 主分类号 H01L29/749
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