Semiconductor devices and methods of manufacture thereof

摘要

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first hybrid bonded device including a first device and a second device hybrid bonded face-to-face to the first device. The first device includes a first substrate having first bonding connectors and a first bonding layer disposed on a surface thereof. A second hybrid bonded device is bonded back-to-back to the first hybrid bonded device. The second hybrid bonded device includes a third device and a fourth device hybrid bonded face-to-face to the third device. The third device includes a second substrate having second bonding connectors and a second bonding layer disposed on a surface. The second bonding connectors of the third device are coupled to the first bonding connectors of the first device, and the second bonding layer of the third device is coupled to the first bonding layer of the first device.

主权项

1. A semiconductor device, comprising:
a first hybrid bonded device comprising a first device and a second device, the second device hybrid bonded face-to-face to the first device, the first device including a first substrate having a plurality of first bonding connectors and a first bonding layer disposed on a surface thereof; and a second hybrid bonded device bonded back-to-back to the first hybrid bonded device, the second hybrid bonded device comprising a third device and a fourth device, the fourth device hybrid bonded face-to-face to the third device, the third device including a second substrate having a plurality of second bonding connectors and a second bonding layer disposed on a surface thereof, wherein the plurality of second bonding connectors of the third device is coupled to the plurality of first bonding connectors of the first device, and wherein the second bonding layer of the third device is coupled to the first bonding layer of the first device.