| 发明名称 | Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode | ||
| 摘要 | A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors. | ||
| 申请公布号 | US9190590(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201113820081 | 申请日期 | 2011.06.22 |
| 申请人 | SHARP KABUSHIKI KAISHA | 发明人 | Shibata Akihide;Negishi Tetsu;Komiya Kenji;Yaoi Yoshifumi;Shiomi Takeshi;Iwata Hiroshi;Takahashi Akira |
| 分类号 | H01L33/20;H01L33/64;H01L33/58;H01L33/08;H01L31/052;H01L33/14;H01L33/26;H01L25/075;H01L33/18;H01L33/24;H01L31/0352;H01L31/054;H01L33/42;G02F1/1335;H01L33/00;H01L33/32 | 主分类号 | H01L33/20 |
| 代理机构 | Morrison & Foerster LLP | 代理人 | Morrison & Foerster LLP |
| 主权项 | 1. A light-emitting element comprising: a first conductivity type semiconductor base having an area; a plurality of first conductivity type protrusion-shaped semiconductors formed on the first conductivity type semiconductor base; and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors, the light emitting element having a light emitting area larger than the area of the first conductivity type semiconductor base, the light emitting area being given by a total area of the second conductivity type semiconductor layer. | ||
| 地址 | Osaka-shi JP | ||