Ultraviolet semiconductor light-emitting device and fabrication method

摘要

An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the entire tunneling junction and the optical phase matching layer. A patterned structure is provided over the tunnel junction for full-angle light reflection. Part of the tunneling junction forms ohmic contact with the low work function reflecting metal. The patterned distribution design can effectively reduce the ohmic contact resistance.

主权项

1. A UV semiconductor light-emitting device, comprising:
a light-emitting epitaxial layer having one side as a light-emitting surface and another side as a non-light-emitting surface and comprising an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunneling junction at the non-light-emitting side and comprising a patterned structure having openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the tunneling junction and the optical phase matching layer.