发明名称 Apparatuses and methods comprising a channel region having different minority carrier lifetimes
摘要 Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods are also disclosed.
申请公布号 US9190472(B2) 申请公布日期 2015.11.17
申请号 US201414293854 申请日期 2014.06.02
申请人 Micron Technology, Inc. 发明人 Tessariol Paolo;Mauri Aurelio Giancarlo;Goda Akira;Zhao Yijie
分类号 H01L27/108;H01L29/10;H01L27/115 主分类号 H01L27/108
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A memory device, comprising: an elongated silicon channel including a body region; a number of memory cell gates disposed along a length of the body region, each of the plurality of gates being separated from the body region by respective charge storage structures; wherein the elongated silicon channel further comprises a first recombination region located at a first end, and a second recombination region located at a second end, the first and second recombination regions including a material of the same conductivity type as the body region; wherein at least one of the first recombination region and the second recombination region have a lower minority carrier lifetime than the body region.
地址 Boise ID US