发明名称 |
Apparatuses and methods comprising a channel region having different minority carrier lifetimes |
摘要 |
Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods are also disclosed. |
申请公布号 |
US9190472(B2) |
申请公布日期 |
2015.11.17 |
申请号 |
US201414293854 |
申请日期 |
2014.06.02 |
申请人 |
Micron Technology, Inc. |
发明人 |
Tessariol Paolo;Mauri Aurelio Giancarlo;Goda Akira;Zhao Yijie |
分类号 |
H01L27/108;H01L29/10;H01L27/115 |
主分类号 |
H01L27/108 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A memory device, comprising:
an elongated silicon channel including a body region; a number of memory cell gates disposed along a length of the body region, each of the plurality of gates being separated from the body region by respective charge storage structures; wherein the elongated silicon channel further comprises a first recombination region located at a first end, and a second recombination region located at a second end, the first and second recombination regions including a material of the same conductivity type as the body region; wherein at least one of the first recombination region and the second recombination region have a lower minority carrier lifetime than the body region. |
地址 |
Boise ID US |