Super junction semiconductor device and method for manufacturing the same

摘要

There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

主权项

1. A super junction semiconductor device comprising:
an n-type semiconductor region disposed in a substrate; two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate; a p-type body region disposed on at least one of the p-type semiconductor regions; and a source region disposed in the p-type body region, wherein a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions are implanted with an n-type dopant.