| 发明名称 | Method for producing a copper layer on a semiconductor body using a printing process | ||
| 摘要 | A method for producing a metal layer on a wafer is described. In one embodiment the method comprises providing a semiconductor wafer including a coating, printing a metal particle paste on the semiconductor wafer thereby forming a metal layer and heating the metal layer in a reductive gas for sintering the metal particle paste or for annealing a sintered metal particle paste in an oven. | ||
| 申请公布号 | US9190322(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201414163694 | 申请日期 | 2014.01.24 |
| 申请人 | Infineon Technologies AG | 发明人 | Mischitz Martin;Schneegans Manfred;Heinrici Markus |
| 分类号 | H01L21/44;H01L21/768;H01L23/00;H01L21/027;H01L23/532 | 主分类号 | H01L21/44 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method comprising: providing a semiconductor wafer including a coating; printing a metal particle paste on the semiconductor wafer thereby forming a metal layer, wherein printing of the metal particle paste comprises: applying a photoresist layer on the semiconductor wafer;structuring the photoresist layer using a photolithographic process; andapplying the metal particle paste to the structured photoresist layer; and heating the metal layer in a reductive gas for sintering the metal particle paste or for annealing a sintered metal particle paste in an oven. | ||
| 地址 | Neubiberg DE | ||