Interconnection structures and fabrication method thereof

摘要

A method is provided for fabricating an interconnection structure. The method includes providing a substrate having certain semiconductor devices, a metal layer electrically connecting with the semiconductor devices, and a barrier layer on the metal layer. The method also includes forming a dielectric layer on the substrate; and forming an antireflective coating on the dielectric layer. Further, the method includes forming a second mask having a first pattern corresponding to a through hole in the dielectric layer, wherein the antireflective coating significantly reduces lithographic light reflection to avoid photoresist residue in the first pattern; and forming a through hole by etching the dielectric layer and the antireflective coating covering the dielectric layer using the second mask as an etching mask. Further, the method also includes forming a via by filling the through hole with a conductive material.

主权项

1. A method for fabricating an interconnection structure, comprising:
providing a substrate having certain semiconductor devices, a metal layer electrically connecting with the semiconductor devices, and a barrier layer on the metal layer; forming a dielectric layer on the substrate; forming a black diamond hard mask on the dielectric layer; forming an antireflective coating made of silicon oxynitride (SiON) on the black diamond hard mask that is on the dielectric layer; forming a second mask having a first pattern corresponding to a through hole, wherein the antireflective coating significantly reduces lithographic light reflection to avoid photoresist residue in the first pattern; forming a through hole by etching the dielectric layer and the antireflective coating covering the dielectric layer using the second mask as an etching mask; and forming a via by filling the through hole with a conductive material.