Die edge contacts for semiconductor devices

摘要

A semiconductor device utilizing die edge contacts is provided. An integrated circuit die has a post-passivation layer with a trench filled with a conductive material extending from a contact to a die edge, thereby forming a die edge contact. Optionally, a through substrate via may be positioned along the die edge such that the conductive material in the trench is electrically coupled to the through-substrate via, thereby forming a larger die edge contact. The integrated circuit die may be placed in a multi-die package wherein the multi-die package includes walls having a major surface perpendicular to a major surface of the integrated circuit die. The die edge contacts are electrically coupled to contacts on the walls of the multi-die package. The multi-die package may include edge contacts for connecting to another substrate, such as a printed circuit board, a packaging substrate, a high-density interconnect, or the like.

主权项

1. A semiconductor structure comprising:
an integrated circuit substrate having a contact pad formed thereon; a passivation layer formed over the integrated circuit substrate, the passivation layer exposing at least a portion of the contact pad and having a trench from the contact pad to an outermost edge of the passivation layer; and a conductive material filling the trench of the passivation layer to form a die-edge contact.