Semiconductor device and method of forming RF FEM and RF transceiver in semiconductor package

摘要

A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.

主权项

1. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a low pass filter, first balun, and second balun formed on a first surface of the first semiconductor die; providing a second semiconductor die including a bandpass filter; attaching the second semiconductor die to the first semiconductor die over the first surface of the first semiconductor die; providing a third semiconductor die including a radio frequency (RF) switch; attaching the third semiconductor die to the first semiconductor die over the first surface of the first semiconductor die adjacent to the second semiconductor die; providing a fourth semiconductor die including an RF transceiver; and attaching the fourth semiconductor die to a second surface of the first semiconductor die opposite the first surface of the first semiconductor die.