| 发明名称 |
Extended lifetime ion source |
| 摘要 |
An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber. |
| 申请公布号 |
US9187832(B2) |
申请公布日期 |
2015.11.17 |
| 申请号 |
US201313886683 |
申请日期 |
2013.05.03 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Biloiu Costel;Sporleder David P.;Scheuer Jay;Bassom Neil |
| 分类号 |
H01J37/00;C23F4/00;H01J37/305;H01J27/08;H01J37/08 |
主分类号 |
H01J37/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An ion source, comprising:
an ion source chamber; a cathode disposed in the ion source chamber and configured to emit electrons to generate an arc plasma within the ion source chamber, the ion source chamber and cathode comprising a refractory metal;
a repeller configured to repel electrons back into the arc plasma; anda reactive insert disposed in the ion source chamber, the reactive insert interoperative with a halogen species introduced into the ion source chamber to suppress etching of the refractory metal during operation of the ion source. |
| 地址 |
Gloucester MA US |
