RECTIFIER DIODE AND METHOD OF FABRICATING THE SAME

摘要

Provided are a rectifier diode and a manufacturing method thereof. The rectifier diode includes an insulator layer which includes an insulator material and a semiconductor layer which is located on the insulator layer and includes an n-type ZnO-based oxide semiconductor and has a rectification property between the insulator layer and the semiconductor layer. Therefore, the rectifier diode with an improved electrical property is provided. Also, the choice of a material is expanded by replacing a P-type oxide semiconductor with many limitations with the insulator layer in comparison with the existing oxide diode. Therefore, the control range of the change of the electrical property is widened.